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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3870 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB Collector-base voltage PARAMETER Collector-emitter voltage Emitter-base voltage INC Collector current (DC) E SEM ANG H Ta=25ae Open emitter Open base OND IC CONDITIONS TOR UC VALUE 500 400 7 7 15 3 2 UNIT V V V A A A Open collector Collector current (pulse) Base current (DC) PC Collector power dissipation TC=25ae 40 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3870 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 400 1.0 1.5 100 100 |I |I TYP. MAX UNIT V V V A A SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton ts tf IN Fall time Turn-on time Storage time ANG CH MIC E SE DUC ON 30 TOR 0.7 2.0 0..3 MHz |I |I |I s s s IC=3A ;IB=0.6A;IB2=-1.2A VCC=150V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3870 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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